Doping of Self-Catalyzed Nanowires under the Influence of Droplets

Yunyan Zhang*, Zhiyuan Sun, Ana M. Sanchez, Manfred Ramsteiner, Martin Aagesen, Jiang Wu, Dongyoung Kim, Pamela Jurczak, Suguo Huo, Lincoln J. Lauhon, Huiyun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Controlled and reproducible doping is essential for nanowires (NWs) to realize their functions. However, for the widely used self-catalyzed vapor-liquid-solid (VLS) growth mode, the doping mechanism is far from clear, as the participation of the nanoscale liquid phase makes the doping environment highly complex and significantly different from that of the thin film growth. Here, the doping mechanism of self-catalyzed NWs and the influence of self-catalytic droplets on the doping process are systematically studied using beryllium (Be) doped GaAs NWs. Be atoms are found for the first time to be incorporated into NWs predominantly through the Ga droplet that is observed to be beneficial for setting up thermodynamic equilibrium at the growth front. Be dopants are thus substitutional on Ga sites and redundant Be atoms are accumulated inside the Ga droplets when NWs are saturated, leading to the change of the Ga droplet properties and causing the growth of phase-pure zincblende NWs. This study is an essential step toward the design and fabrication of nanowire devices.

Original languageEnglish (US)
Pages (from-to)81-87
Number of pages7
JournalNano letters
Volume18
Issue number1
DOIs
StatePublished - Jan 10 2018

Keywords

  • Be doping
  • Ga droplet
  • Nanowire
  • incorporation path
  • phase pure

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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