@inproceedings{df4e2ade1cad4e82a128ceacc53494ed,
title = "Doping profile measurements in a 65-nm commercial product using atom probe tomography",
abstract = "Doping profile measurements in extremely small features like transistor gates or source/drain regions is a challenging task for the semiconductor industry. In our article, we successfully used an atom probe tomography (APT) tool to measure the doping concentration and profile of the dopant elements in a commercial 65 nm product. APT not only delivers doping concentrations but also gives the highest spatial resolution (sub-1 nm) three-dimensional compositional information of any microscopy technique.",
author = "Lev Klibanov and Dick James and Dieter Isheim",
year = "2008",
doi = "10.1361/cp2008istfa297",
language = "English (US)",
isbn = "9780871707147",
series = "Conference Proceedings from the International Symposium for Testing and Failure Analysis",
pages = "297--300",
booktitle = "ISTFA 2008",
note = "34th International Symposium for Testing and Failure Analysis, ISTFA 2008 ; Conference date: 02-11-2008 Through 06-11-2008",
}