Doping profile measurements in a 65-nm commercial product using atom probe tomography

Lev Klibanov*, Dick James, Dieter Isheim

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Doping profile measurements in extremely small features like transistor gates or source/drain regions is a challenging task for the semiconductor industry. In our article, we successfully used an atom probe tomography (APT) tool to measure the doping concentration and profile of the dopant elements in a commercial 65 nm product. APT not only delivers doping concentrations but also gives the highest spatial resolution (sub-1 nm) three-dimensional compositional information of any microscopy technique.

Original languageEnglish (US)
Title of host publicationISTFA 2008
Subtitle of host publicationProceedings from the 34th International Symposium for Testing and Failure Analysis
Pages297-300
Number of pages4
DOIs
StatePublished - Dec 1 2008
Event34th International Symposium for Testing and Failure Analysis, ISTFA 2008 - Portland, OR, United States
Duration: Nov 2 2008Nov 6 2008

Other

Other34th International Symposium for Testing and Failure Analysis, ISTFA 2008
CountryUnited States
CityPortland, OR
Period11/2/0811/6/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality

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