We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.
|Original language||English (US)|
|Journal||Proceedings - IEEE International Symposium on Circuits and Systems|
|State||Published - Jan 1 2001|
|Event||IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia|
Duration: May 6 2001 → May 9 2001
ASJC Scopus subject areas
- Electrical and Electronic Engineering