Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors

Romain Chevallier, Abbas Haddadi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface dark currents. The photodetectors exhibited high surface resistivity after passivation with SiO2, which permits the use of small size features without having strong surface leakage current degrading the electrical performance. Fabricating a microjunction structure (25×25 μm2 mesas with 10×10 μm2 microjunctions) with this photodetector double barrier design results in a dark current density of 6.3×10-6 A/cm2 at 77 K. The device has an 8 μm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 μm-thick absorption region, which results in a specific detectivity value of 1.2×1012 cm·Hz1/2/W at 77 K.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nano Electronics and Photonics XV
EditorsGiuseppe Leo, Gail J. Brown, Manijeh Razeghi, Jay S. Lewis
PublisherSPIE
ISBN (Electronic)9781510615656
DOIs
StatePublished - Jan 1 2018
EventQuantum Sensing and Nano Electronics and Photonics XV 2018 - San Francisco, United States
Duration: Jan 28 2018Feb 2 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10540
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherQuantum Sensing and Nano Electronics and Photonics XV 2018
CountryUnited States
CitySan Francisco
Period1/28/182/2/18

Keywords

  • Infrared
  • bandgap engineering
  • heterostructures
  • imaging
  • photodetectors
  • semiconductors
  • superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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