Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes

Xiaoyang Cheng, Mario Caironi*, Yong Young Noh, Christopher Newman, Jianpu Wang, Mi Jung Lee, Kal Banger, Riccardo Di Pietro, Antonio Facchetti, Henning Sirringhaus

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


In this contribution we demonstrate for the first time a downscaled n-channel organic field-effect transistors based on N,N′- dialkylsubstituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) with inkjet printed electrodes. First we demonstrate that the use of a high boiling point solvent is critical to achieve extended crystalline domains in spin-coated thin films and thus high electron mobility >0.1 cm2 V-1 s-1 in top-gate devices. Then inkjet-printing is employed to realize sub-micrometer scale channels by dewetting of silver nanoparticles off a first patterned gold contact. By employing a 50 nm crosslinked fluoropolymer gate dielectric, ∼200 nm long channel transistors can achieve good current saturation when operated <5 V with good bias stress stability.

Original languageEnglish (US)
Pages (from-to)320-328
Number of pages9
JournalOrganic Electronics
Issue number2
StatePublished - Feb 2012


  • Bias stress stability
  • Contact resistance
  • Inkjet printing
  • Organic field-effect transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes'. Together they form a unique fingerprint.

Cite this