Early stages of oxygen segregation and precipitation in silicon

A. Bourret*, J. Thibault-Desseaux, D. N. Seidman

*Corresponding author for this work

Research output: Contribution to journalArticle

165 Scopus citations

Abstract

The early stages of oxygen segregation at dislocation and precipitation in the bulk have been investigated by high-resolution electron microscopy in Czochralski grown silicon. Two kinds of precipitates are observed: a crystalline silica phase, coesite, and an amorphous phase. Both forms coexist after 650 °C heat treatment: the so-called rodlike defects are in fact long 〈011〉 ribbons of coesite associated with interstitial dipoles. This crystalline form is favored by a high oxygen supersaturation and a low carbon content. Above 870 °C amorphous platelets of silica are formed on the {100} planes, whereas coesite is no longer observed but interstitial dislocation loops are always present. The strain produced by such precipitates is partially relaxed by Si interstitial emission, which explains the internal formation of dislocations. It is suggested that both forms are nucleated on two different species of nuclei. At 〈011〉 dislocation cores it is shown that the coesite phase is stabilized over a wide range of oxygen content or annealing temperature.

Original languageEnglish (US)
Pages (from-to)825-836
Number of pages12
JournalJournal of Applied Physics
Volume55
Issue number4
DOIs
StatePublished - Dec 1 1984

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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