Early stages of plasma synthesis of diamond films

R. Meilunas; M. S. Wong; K. C. Sheng; R. P.H. Chang; R. P. Van Duyne

doi:10.1063/1.101124

Early stages of plasma synthesis of diamond films

R. Meilunas^*, M. S. Wong, K. C. Sheng, R. P.H. Chang, R. P. Van Duyne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x-ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.

Original language	English (US)
Pages (from-to)	2204-2206
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	22
DOIs	https://doi.org/10.1063/1.101124
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.101124

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abstract = "The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x-ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.",

author = "R. Meilunas and Wong, {M. S.} and Sheng, {K. C.} and Chang, {R. P.H.} and {Van Duyne}, {R. P.}",

year = "1989",

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AU - Meilunas, R.

AU - Wong, M. S.

AU - Sheng, K. C.

AU - Chang, R. P.H.

AU - Van Duyne, R. P.

PY - 1989

Y1 - 1989

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AB - The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x-ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.

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Early stages of plasma synthesis of diamond films

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