Effect of 20–95 eV Ar ion bombardment of GaAs(001): In pursuit of damage-free ion-assisted growth and etching

J. Mirecki Millunchick, S. A. Barnett

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Defect generation due to very-low-energy ion bombardment of GaAs(00l) has been studied. Ar+ bombardment was performed at energies E = 20–95 eV and current densities J= 0.1 -0.75 mA/cm2 on surfaces maintained at 615 °C in an As4 flux, both without growth and during GaAs molecular beam epitaxy. Reflection high-energy electron diffraction patterns exhibited 2×4 reconstruction and strong Kikuchi lines, indicative of flat ordered surfaces, independent of E and J. Cross-sectional transmission electron microscopy showed that subsurface dislocation loops were generated when 55 eV. The defect density increased with increasing E and J. Films grown withE≤50 eV were free of extended defects, showing that the beneficial effects of ion-assisted molecular beam epitaxycan be achieved without causing ion damage. Measurable sputtering rates were observed forE≤50 eV at J=0.5 mA/cm2.

Original languageEnglish (US)
Pages (from-to)1155-1159
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - May 1995

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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