Effect of 20–95 eV Ar ion bombardment of GaAs(001): In pursuit of damage-free ion-assisted growth and etching

INIS

• energy 100%
• defects 100%
• ions 100%
• gallium arsenides 100%
• growth 66%
• surfaces 66%
• ion beams 66%
• damage 66%
• transmission electron microscopy 33%
• films 33%
• sputtering 33%
• etching 33%
• density 33%
• reflection 33%
• increasing 33%
• molecular beam epitaxy 33%
• dislocations 33%
• current density 33%
• electron diffraction 33%
• molecular beams 33%
• argon ions 33%
• kikuchi lines 33%

Material Science

• Gallium Arsenide 100%
• Ion Implantation 66%
• Surface 66%
• Defect 66%
• Defect Density 33%
• Reflection High-Energy Electron Diffraction 33%
• Diffraction Pattern 33%
• Molecular Beam Epitaxy 33%
• Etching 33%
• Transmission Electron Microscopy 33%
• Density 33%
• Dislocation 33%