Effect of annealing on the transport properties of an epitaxial film of bismuth

B. Y. Jin; H. K. Wong; G. K. Wong; J. B. Ketterson; Yakov Eckstein

doi:10.1016/0040-6090(83)90171-2

Effect of annealing on the transport properties of an epitaxial film of bismuth

B. Y. Jin^*, H. K. Wong, G. K. Wong, J. B. Ketterson, Yakov Eckstein

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.

Original language	English (US)
Pages (from-to)	29-36
Number of pages	8
Journal	Thin Solid Films
Volume	110
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(83)90171-2
State	Published - Dec 2 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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abstract = "We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.",

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AU - Ketterson, J. B.

AU - Eckstein, Yakov

PY - 1983/12/2

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N2 - We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.

AB - We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.

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Effect of annealing on the transport properties of an epitaxial film of bismuth

Abstract

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