Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

Farhad Larki; Arash Dehzangi; Md Shabiul Islam; Sawal Hamid Md Ali; Alam Abedini; Burhanuddin Yeop Majlis

doi:10.1007/s12633-017-9606-1

Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

Farhad Larki^*, Arash Dehzangi, Md Shabiul Islam, Sawal Hamid Md Ali, Alam Abedini, Burhanuddin Yeop Majlis

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V _th), transconductance (g _m) and drain conductance (g _D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (I_OFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (I_ON) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.

Original language	English (US)
Pages (from-to)	1305-1314
Number of pages	10
Journal	Silicon
Volume	10
Issue number	4
DOIs	https://doi.org/10.1007/s12633-017-9606-1
State	Published - Jul 1 2018

Funding

Acknowledgements The authors gratefully acknowledge University Kebangsaan Malaysia (UKM) for supporting this work under Grant DLP-2015-009 and the Ministry of Education, Malaysia for High Institution Centre of Excellence (HiCOE) research fund (AKU95).

Keywords

3D numerical simulations
Channel width
Junctionless transistors
Lateral gate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1007/s12633-017-9606-1

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title = "Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study",

abstract = "In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers{\textquoteright} density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.",

keywords = "3D numerical simulations, Channel width, Junctionless transistors, Lateral gate",

author = "Farhad Larki and Arash Dehzangi and Islam, {Md Shabiul} and Ali, {Sawal Hamid Md} and Alam Abedini and Majlis, {Burhanuddin Yeop}",

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AU - Dehzangi, Arash

AU - Islam, Md Shabiul

AU - Ali, Sawal Hamid Md

AU - Abedini, Alam

AU - Majlis, Burhanuddin Yeop

PY - 2018/7/1

Y1 - 2018/7/1

N2 - In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.

AB - In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.

KW - 3D numerical simulations

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Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

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