Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

C. H. Liu; Min Van Min; Xiang Liu; Eric Seelig; R. P.H. Chang

doi:10.1016/S0009-2614(02)00162-8

Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

C. H. Liu^*, Min Van Min, Xiang Liu, Eric Seelig, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

Original language	English (US)
Pages (from-to)	43-47
Number of pages	5
Journal	Chemical Physics Letters
Volume	355
Issue number	1-2
DOIs	https://doi.org/10.1016/S0009-2614(02)00162-8
State	Published - Mar 25 2002

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

Access to Document

10.1016/S0009-2614(02)00162-8

Cite this

@article{076ea77cacca4b1abfc73b46666dad55,

title = "Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method",

abstract = "This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.",

author = "Liu, {C. H.} and {Van Min}, Min and Xiang Liu and Eric Seelig and Chang, {R. P.H.}",

year = "2002",

month = mar,

day = "25",

doi = "10.1016/S0009-2614(02)00162-8",

language = "English (US)",

volume = "355",

pages = "43--47",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

AU - Liu, C. H.

AU - Van Min, Min

AU - Liu, Xiang

AU - Seelig, Eric

AU - Chang, R. P.H.

PY - 2002/3/25

Y1 - 2002/3/25

N2 - This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

AB - This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

UR - http://www.scopus.com/inward/record.url?scp=0037170887&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037170887&partnerID=8YFLogxK

U2 - 10.1016/S0009-2614(02)00162-8

DO - 10.1016/S0009-2614(02)00162-8

M3 - Article

AN - SCOPUS:0037170887

SN - 0009-2614

VL - 355

SP - 43

EP - 47

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-2

ER -

Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this