Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

C. H. Liu*, Min Van Min, Xiang Liu, Eric Seelig, R. P.H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

Original languageEnglish (US)
Pages (from-to)43-47
Number of pages5
JournalChemical Physics Letters
Volume355
Issue number1-2
DOIs
StatePublished - Mar 25 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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