TY - JOUR
T1 - Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method
AU - Liu, C. H.
AU - Van Min, Min
AU - Liu, Xiang
AU - Seelig, Eric
AU - Chang, R. P.H.
PY - 2002/3/25
Y1 - 2002/3/25
N2 - This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.
AB - This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.
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U2 - 10.1016/S0009-2614(02)00162-8
DO - 10.1016/S0009-2614(02)00162-8
M3 - Article
AN - SCOPUS:0037170887
VL - 355
SP - 43
EP - 47
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 1-2
ER -