Effect of etched sidewall tilt on the reflection loss of silicon-on-insulator (SOI) or III-V etched facet reflector

Yunan Zheng; Yingyan Huang; Seng-Tiong Ho

Effect of etched sidewall tilt on the reflection loss of silicon-on-insulator (SOI) or III-V etched facet reflector

Yunan Zheng, Yingyan Huang, Seng-Tiong Ho

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of etching's verticality on the reflection loss of strongly-guiding SOI or weakly-guiding III-V etched facet reflector (EFR) is studied. High tolerance on tilt makes SOI EFR much more resilient to etching deviation.

Original language	English (US)
Title of host publication	Frontiers in Optics, FiO 2008
Publisher	Optical Society of America
ISBN (Print)	9781557528612
State	Published - Jan 1 2008
Event	Frontiers in Optics, FiO 2008 - Rochester, NY, United States Duration: Oct 19 2008 → Oct 23 2008

Other

Other	Frontiers in Optics, FiO 2008
Country	United States
City	Rochester, NY
Period	10/19/08 → 10/23/08

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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title = "Effect of etched sidewall tilt on the reflection loss of silicon-on-insulator (SOI) or III-V etched facet reflector",

abstract = "The effect of etching's verticality on the reflection loss of strongly-guiding SOI or weakly-guiding III-V etched facet reflector (EFR) is studied. High tolerance on tilt makes SOI EFR much more resilient to etching deviation.",

author = "Yunan Zheng and Yingyan Huang and Seng-Tiong Ho",

year = "2008",

month = jan,

day = "1",

language = "English (US)",

isbn = "9781557528612",

booktitle = "Frontiers in Optics, FiO 2008",

publisher = "Optical Society of America",

note = "Frontiers in Optics, FiO 2008 ; Conference date: 19-10-2008 Through 23-10-2008",

}

TY - GEN

T1 - Effect of etched sidewall tilt on the reflection loss of silicon-on-insulator (SOI) or III-V etched facet reflector

AU - Zheng, Yunan

AU - Huang, Yingyan

AU - Ho, Seng-Tiong

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The effect of etching's verticality on the reflection loss of strongly-guiding SOI or weakly-guiding III-V etched facet reflector (EFR) is studied. High tolerance on tilt makes SOI EFR much more resilient to etching deviation.

AB - The effect of etching's verticality on the reflection loss of strongly-guiding SOI or weakly-guiding III-V etched facet reflector (EFR) is studied. High tolerance on tilt makes SOI EFR much more resilient to etching deviation.

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UR - http://www.scopus.com/inward/citedby.url?scp=84898638838&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84898638838

SN - 9781557528612

BT - Frontiers in Optics, FiO 2008

PB - Optical Society of America

T2 - Frontiers in Optics, FiO 2008

Y2 - 19 October 2008 through 23 October 2008

ER -