Effect of etched sidewall tilt on the reflection loss of silicon-on-insulator (SOI) or III-V etched facet reflector

Yunan Zheng, Yingyan Huang, Seng-Tiong Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of etching's verticality on the reflection loss of strongly-guiding SOI or weakly-guiding III-V etched facet reflector (EFR) is studied. High tolerance on tilt makes SOI EFR much more resilient to etching deviation.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2008
PublisherOptical Society of America
ISBN (Print)9781557528612
StatePublished - Jan 1 2008
EventFrontiers in Optics, FiO 2008 - Rochester, NY, United States
Duration: Oct 19 2008Oct 23 2008

Other

OtherFrontiers in Optics, FiO 2008
CountryUnited States
CityRochester, NY
Period10/19/0810/23/08

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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