Effect of etched sidewall tilt on the reflection loss of silicon-on-insulator (SOI) or III-V etched facet reflector

Yunan Zheng, Yingyan Huang, Seng Tiong Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of etching's verticality on the reflection loss of strongly-guiding SOI or weakly-guiding III-V etched facet reflector (EFR) is studied. High tolerance on tilt makes SOI EFR much more resilient to etching deviation.

Original languageEnglish (US)
Title of host publicationLaser Science, LS 2008
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528612
DOIs
StatePublished - 2008
EventLaser Science, LS 2008 - Rochester, NY, United States
Duration: Oct 19 2008Oct 23 2008

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherLaser Science, LS 2008
CountryUnited States
CityRochester, NY
Period10/19/0810/23/08

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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