Effect of free carriers on the luminescence efficiency of InP: Er

X. Z. Wang*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A systematic study of the effect of free carriers on the luminescence efficiency of Er-doped InP is reported. As free carrier concentration increases from 1013 to 1017 cm-3, an increase in the Er3+-related emission intensity is observed. This increase is attributed to the enhanced probability of formation of bound excitons at the rare earth centers. For carrier concentrations of greater than 3×10 17 up to 1020 cm-3, the luminescence intensity is only weakly quenched. Free carrier Auger processes play a limited role in determining the Er3+ luminescence efficiency.

Original languageEnglish (US)
Pages (from-to)845-847
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number7
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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