INIS
variations
100%
devices
80%
thickness
60%
simulation
40%
performance
40%
geometry
40%
transistors
40%
electric fields
40%
investigations
20%
voltage
20%
density
20%
computer-aided design
20%
doped materials
20%
saturation
20%
carrier density
20%
Engineering
Characteristics
80%
Thickness
60%
Electric Field
40%
Geometric Parameter
40%
Performance
40%
Carrier Density
20%
Simulation Result
20%
Computer Aided Design
20%
Geometrical Parameter
20%
Main Factor
20%
Saturation Region
20%
Calculates
20%
Physics
Variations
80%
Electric Fields
40%
Performance
40%
Computer Aided Design
20%
Threshold Voltage
20%
Impact
20%
Technology
20%
Independent Variables
20%
Computer Science
Geometric Parameter
40%
Computer Aided Engineering
20%
Threshold Voltage
20%
Design Simulation
20%
Density Variation
20%
Saturation Region
20%
Material Science
Devices
80%
Carrier Concentration
20%