Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation

Rodrigo A. Bernal; Ravi Agrawal; Bei Peng; Kristine A. Bertness; Norman A. Sanford; Albert V. Davydov; Horacio D. Espinosa

doi:10.1021/nl103450e

Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation

Rodrigo A. Bernal, Ravi Agrawal, Bei Peng, Kristine A. Bertness, Norman A. Sanford, Albert V. Davydov, Horacio D. Espinosa

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.

Original language	English (US)
Pages (from-to)	548-555
Number of pages	8
Journal	Nano letters
Volume	11
Issue number	2
DOIs	https://doi.org/10.1021/nl103450e
State	Published - Feb 9 2011

Keywords

Gallium nitride nanowires
first-principles calculations
in situ testing
molecular dynamics
nanowire elastic modulus
size effect
surface reconstruction

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl103450e

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title = "Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation",

abstract = "We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.",

keywords = "Gallium nitride nanowires, first-principles calculations, in situ testing, molecular dynamics, nanowire elastic modulus, size effect, surface reconstruction",

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T1 - Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation

AU - Bernal, Rodrigo A.

AU - Agrawal, Ravi

AU - Peng, Bei

AU - Bertness, Kristine A.

AU - Sanford, Norman A.

AU - Davydov, Albert V.

AU - Espinosa, Horacio D.

PY - 2011/2/9

Y1 - 2011/2/9

N2 - We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.

AB - We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.

KW - Gallium nitride nanowires

KW - first-principles calculations

KW - in situ testing

KW - molecular dynamics

KW - nanowire elastic modulus

KW - size effect

KW - surface reconstruction

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Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation

Abstract

Keywords

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