Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation

Rodrigo A. Bernal, Ravi Agrawal, Bei Peng, Kristine A. Bertness, Norman A. Sanford, Albert V. Davydov, Horacio D. Espinosa

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.

Original languageEnglish (US)
Pages (from-to)548-555
Number of pages8
JournalNano letters
Volume11
Issue number2
DOIs
StatePublished - Feb 9 2011

Keywords

  • Gallium nitride nanowires
  • first-principles calculations
  • in situ testing
  • molecular dynamics
  • nanowire elastic modulus
  • size effect
  • surface reconstruction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

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