Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates

J. H. Song; Y. Cui; J. B. Ketterson

doi:10.1063/1.4801508

Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates

J. H. Song^*, Y. Cui, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated the growth temperature dependences of their physical properties. With increasing growth temperature from 200 °C to 350 °C, the crystal orientation of the film changed from type-A to type-B. The Curie temperatures of all type-B samples were ∼346 K, while the type-A sample showed a lower bulk-like value of ∼318 K, indicating an improvement in magnetic properties. Samples grown at above 550 °C exhibited semiconducting behavior, whereas the lower temperature grown samples show metallic behavior as expected. Our results indicate that growth temperature plays an important role in determining the crystal structure, magnetic, and electrical-transport properties of MnAs/GaAs(100) thin films.

Original language	English (US)
Article number	17C307
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4801508
State	Published - May 7 2013

Funding

This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (2012R1A2A2A02013936).

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4801508

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title = "Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates",

abstract = "We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated the growth temperature dependences of their physical properties. With increasing growth temperature from 200 °C to 350 °C, the crystal orientation of the film changed from type-A to type-B. The Curie temperatures of all type-B samples were ∼346 K, while the type-A sample showed a lower bulk-like value of ∼318 K, indicating an improvement in magnetic properties. Samples grown at above 550 °C exhibited semiconducting behavior, whereas the lower temperature grown samples show metallic behavior as expected. Our results indicate that growth temperature plays an important role in determining the crystal structure, magnetic, and electrical-transport properties of MnAs/GaAs(100) thin films.",

author = "Song, {J. H.} and Y. Cui and Ketterson, {J. B.}",

note = "Funding Information: This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (2012R1A2A2A02013936).",

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month = may,

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doi = "10.1063/1.4801508",

language = "English (US)",

volume = "113",

journal = "Journal of Applied Physics",

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T1 - Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates

AU - Song, J. H.

AU - Cui, Y.

AU - Ketterson, J. B.

N1 - Funding Information: This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (2012R1A2A2A02013936).

PY - 2013/5/7

Y1 - 2013/5/7

N2 - We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated the growth temperature dependences of their physical properties. With increasing growth temperature from 200 °C to 350 °C, the crystal orientation of the film changed from type-A to type-B. The Curie temperatures of all type-B samples were ∼346 K, while the type-A sample showed a lower bulk-like value of ∼318 K, indicating an improvement in magnetic properties. Samples grown at above 550 °C exhibited semiconducting behavior, whereas the lower temperature grown samples show metallic behavior as expected. Our results indicate that growth temperature plays an important role in determining the crystal structure, magnetic, and electrical-transport properties of MnAs/GaAs(100) thin films.

AB - We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated the growth temperature dependences of their physical properties. With increasing growth temperature from 200 °C to 350 °C, the crystal orientation of the film changed from type-A to type-B. The Curie temperatures of all type-B samples were ∼346 K, while the type-A sample showed a lower bulk-like value of ∼318 K, indicating an improvement in magnetic properties. Samples grown at above 550 °C exhibited semiconducting behavior, whereas the lower temperature grown samples show metallic behavior as expected. Our results indicate that growth temperature plays an important role in determining the crystal structure, magnetic, and electrical-transport properties of MnAs/GaAs(100) thin films.

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Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates

Abstract

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