Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates

INIS

• crystal structure 20%
• crystals 20%
• curie temperature 20%
• epitaxy 40%
• films 20%
• gallium arsenides 60%
• growth 80%
• increasing 20%
• magnetic properties 20%
• manganese arsenides 60%
• molecular beam epitaxy 20%
• orientation 20%
• physical properties 20%
• substrates 40%
• temperature dependence 20%
• thin films 60%
• transport 20%
• values 20%

Chemistry

• Charge Transfer 20%
• Crystal Orientation 20%
• Crystal Structure 20%
• Curie Temperature 20%
• Electronic Property 20%
• Liquid Film 20%
• Magnetic Property 40%
• Molecular Beam Epitaxy 20%
• Physical Property 20%
• Reaction Temperature 100%
• Sample 80%
• Transport Property 20%

Material Science

• Crystal Orientation 20%
• Crystal Structure 20%
• Gallium Arsenide 60%
• Thin Films 60%