Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

S. T. Ahn; H. W. Kennel; J. D. Plummer; W. A. Tiller; Z. U. Rek; S. R. Stock

doi:10.1063/1.100114

Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

S. T. Ahn^*, H. W. Kennel, J. D. Plummer, W. A. Tiller, Z. U. Rek, S. R. Stock

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The effects of oxygen precipitation and surface films (SiO₂ vs Si₃N₄) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si₃N₄ than that under SiO₂ covered with Si₃N₄ is attributed to the slower recombination velocity of interstitials at the Si₃N₄/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.

Original language	English (US)
Pages (from-to)	34-36
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	1
DOIs	https://doi.org/10.1063/1.100114
State	Published - 1988

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Physics and Astronomy (miscellaneous)

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title = "Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon",

abstract = "The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.",

author = "Ahn, {S. T.} and Kennel, {H. W.} and Plummer, {J. D.} and Tiller, {W. A.} and Rek, {Z. U.} and Stock, {S. R.}",

year = "1988",

doi = "10.1063/1.100114",

language = "English (US)",

volume = "53",

pages = "34--36",

journal = "Applied Physics Letters",

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T1 - Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

AU - Ahn, S. T.

AU - Kennel, H. W.

AU - Plummer, J. D.

AU - Tiller, W. A.

AU - Rek, Z. U.

AU - Stock, S. R.

PY - 1988

Y1 - 1988

N2 - The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.

AB - The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.

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DO - 10.1063/1.100114

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

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Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

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