Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

S. T. Ahn*, H. W. Kennel, J. D. Plummer, W. A. Tiller, Z. U. Rek, S. R. Stock

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.

Original languageEnglish (US)
Pages (from-to)34-36
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number1
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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