Effect of persistent photoconductivity in undoped gainp/gaas quantum wells

M. Ahoujja; S. Elhamri; R. S. Newrock; D. B. Mast; W. C. Mitchel; Manijeh Razeghi; M. Erdtman

doi:10.1006/spmi.1995.1099

Effect of persistent photoconductivity in undoped gainp/gaas quantum wells

M. Ahoujja, S. Elhamri, R. S. Newrock, D. B. Mast, W. C. Mitchel, Manijeh Razeghi, M. Erdtman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A long-lived persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped Ga_0.51In_0.49P/GaAs quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas measurements. Both the low field mobility and quantum scattering time increased with increasing carrier concentration after illumination with red light. The increase in carrier concentration is attributed to photoexcitation of carriers from a deep level located at 0.9 eV below the conduction band of InGaP. Parallel conduction due to extended illumination has also been observed in the anomalous behavior of the quantum Hall plateaus.

Original language	English (US)
Pages (from-to)	147-152
Number of pages	6
Journal	Superlattices and Microstructures
Volume	18
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1995.1099
State	Published - Jan 1 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effect of persistent photoconductivity in undoped gainp/gaas quantum wells",

abstract = "A long-lived persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped Ga0.51In0.49P/GaAs quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas measurements. Both the low field mobility and quantum scattering time increased with increasing carrier concentration after illumination with red light. The increase in carrier concentration is attributed to photoexcitation of carriers from a deep level located at 0.9 eV below the conduction band of InGaP. Parallel conduction due to extended illumination has also been observed in the anomalous behavior of the quantum Hall plateaus.",

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AU - Ahoujja, M.

AU - Elhamri, S.

AU - Newrock, R. S.

AU - Mast, D. B.

AU - Mitchel, W. C.

AU - Razeghi, Manijeh

AU - Erdtman, M.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A long-lived persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped Ga0.51In0.49P/GaAs quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas measurements. Both the low field mobility and quantum scattering time increased with increasing carrier concentration after illumination with red light. The increase in carrier concentration is attributed to photoexcitation of carriers from a deep level located at 0.9 eV below the conduction band of InGaP. Parallel conduction due to extended illumination has also been observed in the anomalous behavior of the quantum Hall plateaus.

AB - A long-lived persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped Ga0.51In0.49P/GaAs quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas measurements. Both the low field mobility and quantum scattering time increased with increasing carrier concentration after illumination with red light. The increase in carrier concentration is attributed to photoexcitation of carriers from a deep level located at 0.9 eV below the conduction band of InGaP. Parallel conduction due to extended illumination has also been observed in the anomalous behavior of the quantum Hall plateaus.

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Effect of persistent photoconductivity in undoped gainp/gaas quantum wells

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