Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance

Choongik Kim*, Antonio Facchetti, Tobin J. Marks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Pentacene is one of the most studied semiconductor for organic thin-film transistors (OTFTs), and enhanced understanding of pentacene-based TFTs has significantly advanced the organic electronics. We report here the crucial effect of the polymer gate dielectric glass transition temperature (T g) on pentacene film growth mode, microstructure, and the resulting TFT performance. Nanoscopically-confmed thin polymer films are known to exhibit reduced glass-transition temperatures versus the corresponding bulk values, and we demonstrate here that pentacene films grown on polymer gate dielectrics at temperatures well below their bulk Tg exhibit morphological/ microstructural transitions and OTFT performance discontinuities at well-defined growth temperatures [defined as the surface Tg, or Tg(s)] characteristic of the underlying polymer structure and independent of the film thickness. The results argue mat realistic OTFT response must take into account this fundamental polymer property, and that TFT measurements represent a new probe of polymer surface thermal properties.

Original languageEnglish (US)
Title of host publicationConjugated Organic Materials-Synthesis, Structure, Device and Applications
Number of pages6
StatePublished - Dec 1 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 24 2008Mar 28 2008


Other2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials


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