Effect of rapid thermal annealing on highly strained InGaAs/GaAs quantum well

Zhenhua Miao*, Yingqiang Xu, Shiyong Zhang, Donghai Wu, Huan Zhao, Zhichuan Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A highly strained In0.45Ga0.55As/GaAs quantum well is grown by solid source molecular beam epitaxy (MBE). The effect of rapid thermal annealing on the optical properties of the highly strained InGaAs/GaAs quantum well is studied. By fitting the room temperature photoluminescence peak wavelength of the highly strained InGaAs/GaAs quantum well, we obtain the diffusion coefficients and the activation energy of In-Ga atoms interdiffusion (0.88 eV).

Original languageEnglish (US)
Pages (from-to)1749-1752
Number of pages4
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume26
Issue number9
StatePublished - Sep 1 2005

Keywords

  • Highly strained InGaAs/GaAs quantum well
  • Molecular beam epitaxy
  • Rapid thermal annealing
  • Room temperature photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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