Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

Z. M. Zeng, P. Khalili Amiri, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang, H. W. Jiang

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Physics & Astronomy