Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(1 1 1) multi-quantum wells

M. R. Pillai, Scott C. Theiring, S. A. Barnett*, Bruce W. Wessels, Arvind Desikan, Eric P. Kvam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This paper describes the effect of Sb pre-deposition on the composition modulation in InAsSb/InAs strained-layer multi-quantum wells. The multi-quantum-well structures, grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs (1 1 1) substrates, had periods of ≈20 nm and nominal InAs0.8Sb0.2 layer thicknesses of ≈4.5 nm. Sb surface coverages from 0 to 1.4 monolayers (ML) were deposited on the InAs surfaces during growth interruptions prior to alloy layer growth. With no pre-deposition, kinematical simulations of measured θ-2θ X-ray diffraction (XRD) patterns yielded best fits for exponential composition profiles as expected for Sb segregation. The 1/e Sb segregation lengths were 1.2-1.6 nm. When ≈0.8 ML of Sb was pre-deposited, XRD simulations indicated sharper InAsSb-on-InAs interfaces. Sb coverages of ≥1 ML broadened the XRD superlattice reflections, indicating that interface roughness increased.

Original languageEnglish (US)
Article number9167
Pages (from-to)79-84
Number of pages6
JournalJournal of Crystal Growth
Volume208
Issue number1
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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