Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array

G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, M. Razeghi

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Y2O3 was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO2 passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at -300 mV of 2.5 × 10-5 A/cm2 and 1.3 × 104 Ω cm2, respectively, and a specific detectivity of 1.4 × 10 12 Jones.

Original languageEnglish (US)
Article number223501
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
StatePublished - Nov 25 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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