TY - JOUR

T1 - Effective Mass from Seebeck Coefficient

AU - Snyder, Gerald Jeffrey

AU - Pereyra, Alessandro

AU - Gurunathan, Ramya

N1 - Funding Information:
G.J.S. and R.G. acknowledge NSF DMREF award# 1729487 and DOE Award DE-AC02-76SF00515. A.P. acknowledges support from the NSF (REU award# DMR-1720139). The authors thank Thomas Chasapis for helpful discussions and Berhanu H. Snyder for assistance with Figure 1.
Funding Information:
G.J.S. and R.G. acknowledge NSF DMREF award# 1729487 and DOE Award DE‐AC02‐76SF00515. A.P. acknowledges support from the NSF (REU award# DMR‐1720139). The authors thank Thomas Chasapis for helpful discussions and Berhanu H. Snyder for assistance with Figure 1 .
Publisher Copyright:
© 2022 Wiley-VCH GmbH.

PY - 2022/5/13

Y1 - 2022/5/13

N2 - Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced (Formula presented.) here (Formula presented.) is the Seebeck effective mass, nH is the charge carrier concentration measured by the Hall effect (nH = 1/eRH, RH is Hall resistance) in 1020 cm−3, T is the absolute temperature in K, S is the Seebeck coefficient, and kB/e = 86.3 μV K−1. This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.

AB - Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced (Formula presented.) here (Formula presented.) is the Seebeck effective mass, nH is the charge carrier concentration measured by the Hall effect (nH = 1/eRH, RH is Hall resistance) in 1020 cm−3, T is the absolute temperature in K, S is the Seebeck coefficient, and kB/e = 86.3 μV K−1. This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.

KW - Hall effect

KW - Seebeck coefficient

KW - effective mass

KW - electronic transport

KW - semiconductor materials

KW - thermoelectric materials

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U2 - 10.1002/adfm.202112772

DO - 10.1002/adfm.202112772

M3 - Article

AN - SCOPUS:85124385794

VL - 32

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 20

M1 - 2112772

ER -