Effects of gate dielectrics and their solvents on characteristics of solution-processed N-channel polymer field-effect transistors

INIS

• dielectrics 100%
• solvents 75%
• polymers 37%
• values 37%
• mobility 37%
• field effect transistors 37%
• interfaces 25%
• layers 25%
• semiconductor materials 25%
• pvp 25%
• deposition 12%
• morphology 12%
• solutions 12%
• electrons 12%
• spin 12%
• trapping 12%
• chemical properties 12%
• swelling 12%
• hydroxides 12%
• dissolution 12%
• methyl methacrylate 12%
• dielectric materials 12%
• phenol 12%
• butanols 12%
• naphthalene 12%
• organic chlorine compounds 12%

Engineering

• Gate Dielectric 50%
• Organic Field Effect Transistors 50%
• Polymer 37%
• Fields 37%
• Characteristics 37%
• Field Effect Transistors 25%
• Field-Effect Transistor 12%
• Dielectric Layer 12%
• Orthogonality 12%
• High Value 12%
• Swelling 12%

Material Science

• Solvent 75%
• Polymer 37%
• Dielectric Material 25%
• Dielectric-Semiconductor Interface 25%
• Solution 12%
• Poly Methyl Methacrylate 12%
• Morphology 12%
• Chemical Property 12%
• Swelling 12%