Effects of metal seed atoms on the electronic properties of self-assembled semiconductor nanowires

Daniel E. Perea*, Eric R. Hemesath, Jessica Lensch Falk, Jonathan E. Allen, Lincoln James Lauhon

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The composition analysis of single Si and Ge nanowires with atom probe tomography is presented. Si and Ge nanowires were grown using Au seeds by the vapor-liquid solid growth process and analyzedusing pulsed-laser atom probe tomography. Statistical analysis of mass spectra with low background counts places an upper bound on Au incorporation of ∼10 ppm. Considering complementary measurements of minority carrier diffusion lengths, it is determined that the use of a Au seed does not significantly influence minority carrier lifetimes in nanowires with a native oxide.

Original languageEnglish (US)
Pages14-17
Number of pages4
StatePublished - Dec 1 2007
Event4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007 - Snowbird, UT, United States
Duration: Apr 18 2007Apr 21 2007

Other

Other4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007
CountryUnited States
CitySnowbird, UT
Period4/18/074/21/07

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Perea, D. E., Hemesath, E. R., Falk, J. L., Allen, J. E., & Lauhon, L. J. (2007). Effects of metal seed atoms on the electronic properties of self-assembled semiconductor nanowires. 14-17. Paper presented at 4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007, Snowbird, UT, United States.