Effects of metal seed atoms on the electronic properties of self-assembled semiconductor nanowires

Daniel E. Perea*, Eric R. Hemesath, Jessica Lensch Falk, Jonathan E. Allen, Lincoln James Lauhon

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The composition analysis of single Si and Ge nanowires with atom probe tomography is presented. Si and Ge nanowires were grown using Au seeds by the vapor-liquid solid growth process and analyzedusing pulsed-laser atom probe tomography. Statistical analysis of mass spectra with low background counts places an upper bound on Au incorporation of ∼10 ppm. Considering complementary measurements of minority carrier diffusion lengths, it is determined that the use of a Au seed does not significantly influence minority carrier lifetimes in nanowires with a native oxide.

Original languageEnglish (US)
Pages14-17
Number of pages4
StatePublished - Dec 1 2007
Event4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007 - Snowbird, UT, United States
Duration: Apr 18 2007Apr 21 2007

Other

Other4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007
CountryUnited States
CitySnowbird, UT
Period4/18/074/21/07

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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