Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition

C. Bayram*, N. Ṕŕ-Laperne, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

AlN/GaN superlattices (SLs) employing various well widths (from 1.5 to 7.0 nm) are grown by metal-organic chemical vapor deposition technique at various growth temperatures (TS) (from 900 to 1035 °C). The photoluminescence (PL), x-ray diffraction, and intersubband (ISB) absorption characteristics of these SLs and their dependency on well width and growth temperature are investigated. Superlattices with thinner wells (grown at the same TS) or grown at lower TS (employing the same well width) are shown to demonstrate higher strain effects leading to a higher PL energy and ISB absorption energy. Simulations are employed to explain the experimental observations. ISB absorptions from 1.04 to 2.15 μm are demonstrated via controlling well width and growth temperature.

Original languageEnglish (US)
Article number201906
JournalApplied Physics Letters
Volume95
Issue number20
DOIs
StatePublished - Nov 30 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this