Efficiency of rare earth intra-4f-shell luminescence in InP

X. Z. Wang*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The factors that influence the thermal quenching and efficiency of intra 4f shell luminescence of Er-doped InP are examined. photoluminescence and photoluminescence transient decay measurements showed that while the photoluminescence intensity decreases with increasing temperature, the measured lifetime of erbium luminescence is nearly temperature independent. This result indicates that the excitation process determines the luminescence efficiency of Er-doped InP. De-excitation processes involving 4f shell electrons need not be considered.

Original languageEnglish (US)
Pages (from-to)725-730
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
StatePublished - Dec 1 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

ASJC Scopus subject areas

  • Materials Science(all)

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