Abstract
We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{ [N, N′ -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt- 5, 5′ -(2, 2′ -bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2 /V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.
Original language | English (US) |
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Article number | 183303 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 18 |
DOIs | |
State | Published - 2010 |
Funding
M.C. thanks Dr. J.-F. Chang for assistance with patterning and Dr. T. Sakanoue and Dr. X. Cheng for useful discussions; M.C. and D.N. thank Dr. L. Fumagalli for his help with DM. We thank Z. Chen of Polyera Corporation for ActivInk™ N2200 synthesis. The research has been supported by the Cambridge Integrated Knowledge Center (CIKC) and the Engineering and Physical Sciences Research Council (EPSRC).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)