Efficient charge injection from a high work function metal in high mobility n -type polymer field-effect transistors

M. Caironi; C. Newman; J. R. Moore; D. Natali; H. Yan; A. Facchetti; H. Sirringhaus

doi:10.1063/1.3424792

Efficient charge injection from a high work function metal in high mobility n -type polymer field-effect transistors

M. Caironi^*, C. Newman, J. R. Moore, D. Natali, H. Yan, A. Facchetti, H. Sirringhaus

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{ [N, N′ -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt- 5, 5′ -(2, 2′ -bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm² /V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.

Original language	English (US)
Article number	183303
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3424792
State	Published - 2010

Funding

M.C. thanks Dr. J.-F. Chang for assistance with patterning and Dr. T. Sakanoue and Dr. X. Cheng for useful discussions; M.C. and D.N. thank Dr. L. Fumagalli for his help with DM. We thank Z. Chen of Polyera Corporation for ActivInk™ N2200 synthesis. The research has been supported by the Cambridge Integrated Knowledge Center (CIKC) and the Engineering and Physical Sciences Research Council (EPSRC).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3424792

Cite this

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title = "Efficient charge injection from a high work function metal in high mobility n -type polymer field-effect transistors",

abstract = "We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{ [N, N′ -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt- 5, 5′ -(2, 2′ -bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2 /V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.",

author = "M. Caironi and C. Newman and Moore, {J. R.} and D. Natali and H. Yan and A. Facchetti and H. Sirringhaus",

note = "Funding Information: M.C. thanks Dr. J.-F. Chang for assistance with patterning and Dr. T. Sakanoue and Dr. X. Cheng for useful discussions; M.C. and D.N. thank Dr. L. Fumagalli for his help with DM. We thank Z. Chen of Polyera Corporation for ActivInk{\texttrademark} N2200 synthesis. The research has been supported by the Cambridge Integrated Knowledge Center (CIKC) and the Engineering and Physical Sciences Research Council (EPSRC).",

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doi = "10.1063/1.3424792",

language = "English (US)",

volume = "96",

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T1 - Efficient charge injection from a high work function metal in high mobility n -type polymer field-effect transistors

AU - Caironi, M.

AU - Newman, C.

AU - Moore, J. R.

AU - Natali, D.

AU - Yan, H.

AU - Facchetti, A.

AU - Sirringhaus, H.

N1 - Funding Information: M.C. thanks Dr. J.-F. Chang for assistance with patterning and Dr. T. Sakanoue and Dr. X. Cheng for useful discussions; M.C. and D.N. thank Dr. L. Fumagalli for his help with DM. We thank Z. Chen of Polyera Corporation for ActivInk™ N2200 synthesis. The research has been supported by the Cambridge Integrated Knowledge Center (CIKC) and the Engineering and Physical Sciences Research Council (EPSRC).

PY - 2010

Y1 - 2010

N2 - We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{ [N, N′ -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt- 5, 5′ -(2, 2′ -bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2 /V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.

AB - We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{ [N, N′ -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt- 5, 5′ -(2, 2′ -bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2 /V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.

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Efficient charge injection from a high work function metal in high mobility n -type polymer field-effect transistors

Abstract

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