@article{aea42aff8fc44790815c2212c259adba,
title = "Efficient GaN photocathodes for low-level ultraviolet signal detection",
abstract = "We report on the properties of GaN-based photocathodes for low light ultraviolet (UV) signal detection. Cesiated Mg-doped p-type GaN layers with 1-μm thickness were used as photocathode materials. Quantum efficiency (QE) as measured on a completed device showed values as high as 30% at 200 nm. A UV/visible rejection ratio of three orders of magnitude at 500 nm was observed. A net increase in the QE was also observed with increasing conductivity of the material.",
keywords = "Cesiation, GaN, NEA, Photocathode, Photodetector",
author = "Shahedipour, {Fatemeh S.} and Ulmer, {Melville P.} and Wessels, {Bruce W.} and Joseph, {Charles L.} and Tokuaki Nihashi",
note = "Funding Information: Manuscript received August 20, 2001; revised December 20, 2001. This work was supported in part by the National Science Foundation under Grant DMR-9705134 and by NASA under Grant NAG5-6730. F. S. Shahedipour is with the School of NanoSciences and NanoEngineering and the Institute for Materials, University of Albany-SUNY, CESTM, Albany, NY 12203 USA (e-mail: sshahedipour@uamail.albany.edu). M. P. Ulmer is with the Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208 USA. B. W. Wessels is with the Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208 USA. C. L. Joseph is with the Department of Physics, Rutgers University, Piscat-away, NJ 08855 USA. T. Nihashi is with the Hamamatsu K. K., Hamamatsu City, 435-8558 Japan. Publisher Item Identifier S 0018-9197(02)02647-7.",
year = "2002",
month = apr,
doi = "10.1109/3.992544",
language = "English (US)",
volume = "38",
pages = "333--335",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}