Efficient GaN photocathodes for low-level ultraviolet signal detection

Fatemeh S. Shahedipour*, Melville P. Ulmer, Bruce W. Wessels, Charles L. Joseph, Tokuaki Nihashi

*Corresponding author for this work

Research output: Contribution to journalLetter

51 Scopus citations

Abstract

We report on the properties of GaN-based photocathodes for low light ultraviolet (UV) signal detection. Cesiated Mg-doped p-type GaN layers with 1-μm thickness were used as photocathode materials. Quantum efficiency (QE) as measured on a completed device showed values as high as 30% at 200 nm. A UV/visible rejection ratio of three orders of magnitude at 500 nm was observed. A net increase in the QE was also observed with increasing conductivity of the material.

Original languageEnglish (US)
Pages (from-to)333-335
Number of pages3
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number4
DOIs
StatePublished - Apr 2002

Keywords

  • Cesiation
  • GaN
  • NEA
  • Photocathode
  • Photodetector

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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