We present results on the development of an anisotropic crystalline etching simulation (ACES) program based on a new continuous Cellular Automata (CA) model. The program provides accurate modeling of etching process with high spatial resolution. Implementation of a dynamic CA technique has resulted in increased simulation speed and reduced memory requirements. A first ACES software based on PC platforms has been realized.
|Original language||English (US)|
|Number of pages||4|
|Journal||International Conference on Solid-State and Integrated Circuit Technology Proceedings|
|State||Published - Dec 1 1998|
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