Efficient route to TIBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source

R. J. McNeely; J. A. Belot; B. J. Hinds; T. J. Marks; J. L. Schindler; M. P. Chudzik; C. R. Kannewurf; X. F. Zhang; D. J. Miller

doi:10.1063/1.119862

Efficient route to TIBa₂Ca₂Cu₃O_9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source

R. J. McNeely, J. A. Belot, B. J. Hinds, T. J. Marks^*, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf, X. F. Zhang, D. J. Miller

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Thin TlBa₂Ca₂Cu₃O_9+x. films were grown on single crystal (110) LaAlO₃ from metal-organic chemical-vapor deposition-derived Ba-Ca-Cu-O_x precursor films employing Ba(hfa)2·mep, Ca(hfa)₂·tet, and Cu(dpm)₂ (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885°C in flowing O₂. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured T_c = 103 K and J_c = 4.4 × 10⁴ A/cm² (77 K, 0 T). Magnetic hysteresis measurements yield J_c = 1.9 × 10⁵ A/cm₂ (30 K, 0.01 T) and show considerable flux pinning at low temperatures with J_c = 1.4 × 10⁵ A/cm² (5 K, 4.5 T).

Original language	English (US)
Pages (from-to)	1243-1245
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	9
DOIs	https://doi.org/10.1063/1.119862
State	Published - Sep 1 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.119862

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@article{4fff1404122f4c3297173506eceef82d,

title = "Efficient route to TIBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source",

abstract = "Thin TlBa2Ca2Cu3O9+x. films were grown on single crystal (110) LaAlO3 from metal-organic chemical-vapor deposition-derived Ba-Ca-Cu-Ox precursor films employing Ba(hfa)2·mep, Ca(hfa)2·tet, and Cu(dpm)2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885°C in flowing O2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured Tc = 103 K and Jc = 4.4 × 104 A/cm2 (77 K, 0 T). Magnetic hysteresis measurements yield Jc = 1.9 × 105 A/cm2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with Jc = 1.4 × 105 A/cm2 (5 K, 4.5 T).",

author = "McNeely, {R. J.} and Belot, {J. A.} and Hinds, {B. J.} and Marks, {T. J.} and Schindler, {J. L.} and Chudzik, {M. P.} and Kannewurf, {C. R.} and Zhang, {X. F.} and Miller, {D. J.}",

year = "1997",

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doi = "10.1063/1.119862",

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T1 - Efficient route to TIBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source

AU - McNeely, R. J.

AU - Belot, J. A.

AU - Hinds, B. J.

AU - Marks, T. J.

AU - Schindler, J. L.

AU - Chudzik, M. P.

AU - Kannewurf, C. R.

AU - Zhang, X. F.

AU - Miller, D. J.

PY - 1997/9/1

Y1 - 1997/9/1

N2 - Thin TlBa2Ca2Cu3O9+x. films were grown on single crystal (110) LaAlO3 from metal-organic chemical-vapor deposition-derived Ba-Ca-Cu-Ox precursor films employing Ba(hfa)2·mep, Ca(hfa)2·tet, and Cu(dpm)2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885°C in flowing O2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured Tc = 103 K and Jc = 4.4 × 104 A/cm2 (77 K, 0 T). Magnetic hysteresis measurements yield Jc = 1.9 × 105 A/cm2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with Jc = 1.4 × 105 A/cm2 (5 K, 4.5 T).

AB - Thin TlBa2Ca2Cu3O9+x. films were grown on single crystal (110) LaAlO3 from metal-organic chemical-vapor deposition-derived Ba-Ca-Cu-Ox precursor films employing Ba(hfa)2·mep, Ca(hfa)2·tet, and Cu(dpm)2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885°C in flowing O2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured Tc = 103 K and Jc = 4.4 × 104 A/cm2 (77 K, 0 T). Magnetic hysteresis measurements yield Jc = 1.9 × 105 A/cm2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with Jc = 1.4 × 105 A/cm2 (5 K, 4.5 T).

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Efficient route to TIBa₂Ca₂Cu₃O_9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source

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