Efficient Schottky-quantum-dot photovoltaics: The roles of depletion, drift, and diffusion

Keith W. Johnston, Andras G. Pattantyus-Abraham, Jason P. Clifford, Stefan H. Myrskog, Sjoerd Hoogland, Harnik Shukla, Ethan J.D. Klem, Larissa Levina, Edward H. Sargent

Research output: Contribution to journalArticlepeer-review

166 Scopus citations

Abstract

PbS colloidal quantum dot photovoltaic devices in a Schottky architecture have demonstrated an infrared power conversion efficiency of 4.2%. Here, we elucidate the internal mechanisms leading to this efficiency. At relevant intensities, the drift length is 10 μm for holes and 1 μm for electrons. Transport within the 150 nm wide depletion region is therefore highly efficient. The electron diffusion length of 0.1 μm is comparable to neutral region width. We quantitatively account for the observed 37% external quantum efficiency, showing that it results from the large depletion width and long carrier lifetime combined.

Original languageEnglish (US)
Article number122111
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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