Efficient Schottky-quantum-dot photovoltaics: The roles of depletion, drift, and diffusion

Keith W. Johnston; Andras G. Pattantyus-Abraham; Jason P. Clifford; Stefan H. Myrskog; Sjoerd Hoogland; Harnik Shukla; Ethan J.D. Klem; Larissa Levina; Edward H. Sargent

doi:10.1063/1.2896295

Efficient Schottky-quantum-dot photovoltaics: The roles of depletion, drift, and diffusion

Keith W. Johnston, Andras G. Pattantyus-Abraham, Jason P. Clifford, Stefan H. Myrskog, Sjoerd Hoogland, Harnik Shukla, Ethan J.D. Klem, Larissa Levina, Edward H. Sargent

Chemistry

Research output: Contribution to journal › Article › peer-review

167 Scopus citations

Abstract

PbS colloidal quantum dot photovoltaic devices in a Schottky architecture have demonstrated an infrared power conversion efficiency of 4.2%. Here, we elucidate the internal mechanisms leading to this efficiency. At relevant intensities, the drift length is 10 μm for holes and 1 μm for electrons. Transport within the 150 nm wide depletion region is therefore highly efficient. The electron diffusion length of 0.1 μm is comparable to neutral region width. We quantitatively account for the observed 37% external quantum efficiency, showing that it results from the large depletion width and long carrier lifetime combined.

Original language	English (US)
Article number	122111
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2896295
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Efficient Schottky-quantum-dot photovoltaics: The roles of depletion, drift, and diffusion",

abstract = "PbS colloidal quantum dot photovoltaic devices in a Schottky architecture have demonstrated an infrared power conversion efficiency of 4.2%. Here, we elucidate the internal mechanisms leading to this efficiency. At relevant intensities, the drift length is 10 μm for holes and 1 μm for electrons. Transport within the 150 nm wide depletion region is therefore highly efficient. The electron diffusion length of 0.1 μm is comparable to neutral region width. We quantitatively account for the observed 37% external quantum efficiency, showing that it results from the large depletion width and long carrier lifetime combined.",

author = "Johnston, {Keith W.} and Pattantyus-Abraham, {Andras G.} and Clifford, {Jason P.} and Myrskog, {Stefan H.} and Sjoerd Hoogland and Harnik Shukla and Klem, {Ethan J.D.} and Larissa Levina and Sargent, {Edward H.}",

note = "Funding Information: The authors wish to thank S. Hinds, G. Koleilat, and G. Konstantatos for helpful discussions. This research was supported by the Natural Sciences and Engineering Research Council of Canada.",

year = "2008",

doi = "10.1063/1.2896295",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Efficient Schottky-quantum-dot photovoltaics

T2 - The roles of depletion, drift, and diffusion

AU - Johnston, Keith W.

AU - Pattantyus-Abraham, Andras G.

AU - Clifford, Jason P.

AU - Myrskog, Stefan H.

AU - Hoogland, Sjoerd

AU - Shukla, Harnik

AU - Klem, Ethan J.D.

AU - Levina, Larissa

AU - Sargent, Edward H.

N1 - Funding Information: The authors wish to thank S. Hinds, G. Koleilat, and G. Konstantatos for helpful discussions. This research was supported by the Natural Sciences and Engineering Research Council of Canada.

PY - 2008

Y1 - 2008

N2 - PbS colloidal quantum dot photovoltaic devices in a Schottky architecture have demonstrated an infrared power conversion efficiency of 4.2%. Here, we elucidate the internal mechanisms leading to this efficiency. At relevant intensities, the drift length is 10 μm for holes and 1 μm for electrons. Transport within the 150 nm wide depletion region is therefore highly efficient. The electron diffusion length of 0.1 μm is comparable to neutral region width. We quantitatively account for the observed 37% external quantum efficiency, showing that it results from the large depletion width and long carrier lifetime combined.

AB - PbS colloidal quantum dot photovoltaic devices in a Schottky architecture have demonstrated an infrared power conversion efficiency of 4.2%. Here, we elucidate the internal mechanisms leading to this efficiency. At relevant intensities, the drift length is 10 μm for holes and 1 μm for electrons. Transport within the 150 nm wide depletion region is therefore highly efficient. The electron diffusion length of 0.1 μm is comparable to neutral region width. We quantitatively account for the observed 37% external quantum efficiency, showing that it results from the large depletion width and long carrier lifetime combined.

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DO - 10.1063/1.2896295

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IS - 12

M1 - 122111

ER -

Efficient Schottky-quantum-dot photovoltaics: The roles of depletion, drift, and diffusion

Abstract

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