Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

Vikram C. Sundar, Jana Zaumseil, Vitaly Podzorov, Etienne Menard, Robert L. Willett, Takao Someya, Michael E. Gershenson, John A. Rogers*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1566 Scopus citations


We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm2/V·s and subthreshold slopes as low as 2 nF·V/decade-cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

Original languageEnglish (US)
Pages (from-to)1644-1646
Number of pages3
Issue number5664
StatePublished - Mar 12 2004

ASJC Scopus subject areas

  • General


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