Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives

Pedram Khalili, Kang Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].

Original languageEnglish (US)
Title of host publication2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467385688
DOIs
StatePublished - Nov 24 2015
Event4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Berkeley, United States
Duration: Oct 1 2015Oct 2 2015

Other

Other4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015
CountryUnited States
CityBerkeley
Period10/1/1510/2/15

Keywords

  • Junctions
  • Magnetic anisotropy
  • Magnetic tunneling
  • Magnetization
  • Random access memory
  • Switches

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives'. Together they form a unique fingerprint.

Cite this