@inproceedings{71547fa3add245fe953586ee6ba292d8,
title = "Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives",
abstract = "The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].",
keywords = "Junctions, Magnetic anisotropy, Magnetic tunneling, Magnetization, Random access memory, Switches",
author = "Pedram Khalili and Kang Wang",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 ; Conference date: 01-10-2015 Through 02-10-2015",
year = "2015",
month = nov,
day = "24",
doi = "10.1109/E3S.2015.7336782",
language = "English (US)",
series = "2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings",
address = "United States",
}