TY - JOUR
T1 - Electric field induced domain-wall dynamics
T2 - Depinning and chirality switching
AU - Upadhyaya, Pramey
AU - Dusad, Ritika
AU - Hoffman, Silas
AU - Tserkovnyak, Yaroslav
AU - Alzate, Juan G.
AU - Amiri, Pedram Khalili
AU - Wang, Kang L.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2013/1/26
Y1 - 2013/1/26
N2 - We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing micromagnetic simulations, we construct a rich phase diagram and find that, in particular, the equilibrium magnetic textures can be tuned between Néel and Bloch domain walls in an elliptical MTJ. Furthermore, we develop a phenomenological model of a quasi-one-dimensional domain wall confined by a parabolic potential and show that, near the Néel-to-Bloch-wall transition, a pulsed electric field induces precessional domain-wall motion which can be used to reverse the chirality of a Néel wall and even depin it. This domain-wall motion controlled by electric fields, in lieu of applied current, may provide a model for ultralow-power domain-wall memory and logic devices.
AB - We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing micromagnetic simulations, we construct a rich phase diagram and find that, in particular, the equilibrium magnetic textures can be tuned between Néel and Bloch domain walls in an elliptical MTJ. Furthermore, we develop a phenomenological model of a quasi-one-dimensional domain wall confined by a parabolic potential and show that, near the Néel-to-Bloch-wall transition, a pulsed electric field induces precessional domain-wall motion which can be used to reverse the chirality of a Néel wall and even depin it. This domain-wall motion controlled by electric fields, in lieu of applied current, may provide a model for ultralow-power domain-wall memory and logic devices.
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U2 - 10.1103/PhysRevB.88.224422
DO - 10.1103/PhysRevB.88.224422
M3 - Article
AN - SCOPUS:84892408122
VL - 88
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 22
M1 - 224422
ER -