Abstract
We present a study of the electric-field-induced switching of magnetic memory bits exhibiting interfacial voltage-controlled magnetic anisotropy (VCMA). Switching is analyzed in the single-domain approximation and in the thermally activated regime. The effects of external magnetic fields, magnitudes of the perpendicular anisotropy and VCMA effect, and voltage pulse width on the switching voltage are discussed. Both in-plane and perpendicular magnetic memory bits are considered. Experimental results are presented and compared to the theoretical model.
| Original language | English (US) |
|---|---|
| Article number | 013912 |
| Journal | Journal of Applied Physics |
| Volume | 113 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 7 2013 |
Funding
The authors would like to thank I. Krivorotov, J. A. Katine, and J. Langer for support and discussions, and for critical contributions to the experimental work. We would also like to thank S. Cherepov, A. Khitun, K. Wong, J. Zhu, Y.-J. Chen, Y. Tserkovnyak, R. Dorrance, D. Markovic, J. Hockel, and G. Carman, for many useful discussions. This work was partially supported by the DARPA program on Nonvolatile Logic and by the NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS).
ASJC Scopus subject areas
- General Physics and Astronomy