Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

Toshihiro Moriga; Daniel R. Kammler; Thomas O. Mason; George B. Palmer; Kenneth R. Poeppelmeier

doi:10.1111/j.1151-2916.1999.tb02145.x

Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

Toshihiro Moriga, Daniel R. Kammler, Thomas O. Mason, George B. Palmer, Kenneth R. Poeppelmeier

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

The homologous compounds In_1-xGa_1+xO₃(ZnO)_k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.47<[In]/([In]+[Ga])<0.67 for the k = 1 member, 0.35<[In]/([In]+[Ga])<0.77 for the k = 2 member, and 0.29<[In]/([In]+[Ga])<1.00 for the k = 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga³⁺ content increased and k decreased. The conductivity increased as k decreased and the In³⁺ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

Original language	English (US)
Pages (from-to)	2705-2710
Number of pages	6
Journal	Journal of the American Ceramic Society
Volume	82
Issue number	10
DOIs	https://doi.org/10.1111/j.1151-2916.1999.tb02145.x
State	Published - 1999

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1111/j.1151-2916.1999.tb02145.x

Cite this

@article{ae55820da57c4335ab83488aaa41a7fc,

title = "Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system",

abstract = "The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.47<[In]/([In]+[Ga])<0.67 for the k = 1 member, 0.35<[In]/([In]+[Ga])<0.77 for the k = 2 member, and 0.29<[In]/([In]+[Ga])<1.00 for the k = 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.",

author = "Toshihiro Moriga and Kammler, {Daniel R.} and Mason, {Thomas O.} and Palmer, {George B.} and Poeppelmeier, {Kenneth R.}",

year = "1999",

doi = "10.1111/j.1151-2916.1999.tb02145.x",

language = "English (US)",

volume = "82",

pages = "2705--2710",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "10",

}

TY - JOUR

T1 - Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

AU - Moriga, Toshihiro

AU - Kammler, Daniel R.

AU - Mason, Thomas O.

AU - Palmer, George B.

AU - Poeppelmeier, Kenneth R.

PY - 1999

Y1 - 1999

N2 - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.47<[In]/([In]+[Ga])<0.67 for the k = 1 member, 0.35<[In]/([In]+[Ga])<0.77 for the k = 2 member, and 0.29<[In]/([In]+[Ga])<1.00 for the k = 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

AB - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.47<[In]/([In]+[Ga])<0.67 for the k = 1 member, 0.35<[In]/([In]+[Ga])<0.77 for the k = 2 member, and 0.29<[In]/([In]+[Ga])<1.00 for the k = 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033204347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033204347&partnerID=8YFLogxK

U2 - 10.1111/j.1151-2916.1999.tb02145.x

DO - 10.1111/j.1151-2916.1999.tb02145.x

M3 - Article

AN - SCOPUS:0033204347

SN - 0002-7820

VL - 82

SP - 2705

EP - 2710

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 10

ER -

Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this