INIS
photocurrents
77%
spin
66%
valleys
55%
spin orientation
44%
transition metals
33%
control
22%
carriers
22%
tuning
22%
polarization
22%
ambient temperature
11%
processing
11%
growth
11%
devices
11%
architecture
11%
molybdenum sulfides
11%
semiconductor materials
11%
excitation
11%
magnetic fields
11%
temperature range 0273-0400 k
11%
magnetic materials
11%
symmetry
11%
thickness
11%
l-s coupling
11%
Chemistry
Electron Spin
100%
Photocurrent
77%
Monolayer
66%
Polarization
22%
Magnetic Field
11%
Photoexcitation
11%
Spintronics
11%
Semiconductor
11%
Momentum
11%
Spin-Orbit Coupling
11%
Magnetic Material
11%
Ambient Reaction Temperature
11%
Device
11%
Time
11%
Inversion
11%
Thickness
11%
Physics
Spin
100%
Photoelectric Emission
77%
Magnitude
22%
Wafer
11%
Magnetic Fields
11%
Room Temperature
11%
Semiconductor
11%
Magnetic Material
11%
Ambient Temperature
11%
Growth
11%
Behavior
11%
Plane
11%
Momentum
11%
Engineering
Photocurrent
77%
Monolayer
66%
Room Temperature
11%
Ambient Temperature
11%
Magnetic Fields
11%
Degeneracy
11%
Magnetoelectronics
11%
Processing
11%
Demonstrates
11%
Architecture
11%
Thickness
11%
Control Gate
11%
Symmetry Spin
11%
Material Science
Monolayers
66%
Semiconductor Material
11%