Electrical properties and conduction mechanisms in La2/3Ca 1/3MnO3 thin films prepared by pulsed laser deposition on different substrates

M. Navasery*, S. A. Halim, Arash Dehzangi, N. Soltani, G. Bahmanrokh, M. Erfani H, A. Kamalianfar, K. Y. Pan, S. C. Chang, S. K. Chen, K. P. Lim, M. M. Awang Kechik

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Perovskite manganite La2/3Ca1/3MnO3 thin films were directly grown on MgO(100), Si(100) and glass substrates by pulsed laser deposition. From the XRD patterns, the films are found to be polycrystalline, single-phase orthorhombic. The metal-insulator transition temperature is 209 K for LCMO/MgO, 266 K for LCMO/Si and 231 K for film deposited on the glass substrate. The conduction mechanism in these films is investigated in different temperature regimes. Low-temperature resistivity data below the phase transition temperature (T P) have been fitted with the relation ρ = ρ0 + ρ 2T2 + ρ 4.5T4.5, indicating that the electron-electron scattering affects the conduction of these materials. The high-temperature resistivity data (T > T P) were explained using variable-range hopping (VRH) and small-polaron hopping (SPH) models. Debye temperature values are 548 K for LCMO/Cg, 568 K for LCMO/Si and 508 K for LCMO/MgO thin films. In all thin films, the best fitting in the range of VRH is found for 3D dimension. The density of states near the Fermi level N (E F) for LCMO/MgO is lower due to the prominent role of the grain boundary in LCMO/MgO and increase in bending of Mn-O-Mn bond angle, which decreases the double exchange coupling of Mn 3+-O2-Mn4+ and in turn makes the LCMO/MgO sample less conducting as compared to the other films.

Original languageEnglish (US)
Pages (from-to)1661-1668
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume116
Issue number4
DOIs
StatePublished - Sep 2014

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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