Electrical properties of n-n ZnSe/GaAs heterojunctions

E. J. Bawolek*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

ZnSe/GaAs n-n heterojunctions were prepared by heteroepitaxial growth of ZnSe on GaAs from the vapor phase. The electrical properties of the heterojunctions were found to be strongly dependent on the ZnSe resistivity. Heterojunctions with semi-insulating (109-1011 Ω cm) ZnSe showed symmetric current density versus voltage (J-V) characteristics and a voltage-independent capacitance. Rectification was shown by n-n heterojunctions prepared with conductive (5-25 Ω cm) ZnSe. J-V and capacitance versus voltage measurements indicated that the n-n structure behaves like a lattice-matched Schottky barrier with a barrier height of 0.7 eV. These findings were compared with recent theoretical models of the electronic structure of the ZnSe/GaAs interface.

Original languageEnglish (US)
Pages (from-to)173-183
Number of pages11
JournalThin Solid Films
Volume131
Issue number3-4
DOIs
StatePublished - Sep 28 1985

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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