Electrical properties of n-n ZnSe/GaAs heterojunctions

E. J. Bawolek; B. W. Wessels

doi:10.1016/0040-6090(85)90138-5

Electrical properties of n-n ZnSe/GaAs heterojunctions

E. J. Bawolek^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

ZnSe/GaAs n-n heterojunctions were prepared by heteroepitaxial growth of ZnSe on GaAs from the vapor phase. The electrical properties of the heterojunctions were found to be strongly dependent on the ZnSe resistivity. Heterojunctions with semi-insulating (10⁹-10¹¹ Ω cm) ZnSe showed symmetric current density versus voltage (J-V) characteristics and a voltage-independent capacitance. Rectification was shown by n-n heterojunctions prepared with conductive (5-25 Ω cm) ZnSe. J-V and capacitance versus voltage measurements indicated that the n-n structure behaves like a lattice-matched Schottky barrier with a barrier height of 0.7 eV. These findings were compared with recent theoretical models of the electronic structure of the ZnSe/GaAs interface.

Original language	English (US)
Pages (from-to)	173-183
Number of pages	11
Journal	Thin Solid Films
Volume	131
Issue number	3-4
DOIs	https://doi.org/10.1016/0040-6090(85)90138-5
State	Published - Sep 28 1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Electrical properties of n-n ZnSe/GaAs heterojunctions",

abstract = "ZnSe/GaAs n-n heterojunctions were prepared by heteroepitaxial growth of ZnSe on GaAs from the vapor phase. The electrical properties of the heterojunctions were found to be strongly dependent on the ZnSe resistivity. Heterojunctions with semi-insulating (109-1011 Ω cm) ZnSe showed symmetric current density versus voltage (J-V) characteristics and a voltage-independent capacitance. Rectification was shown by n-n heterojunctions prepared with conductive (5-25 Ω cm) ZnSe. J-V and capacitance versus voltage measurements indicated that the n-n structure behaves like a lattice-matched Schottky barrier with a barrier height of 0.7 eV. These findings were compared with recent theoretical models of the electronic structure of the ZnSe/GaAs interface.",

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T1 - Electrical properties of n-n ZnSe/GaAs heterojunctions

AU - Bawolek, E. J.

AU - Wessels, B. W.

PY - 1985/9/28

Y1 - 1985/9/28

N2 - ZnSe/GaAs n-n heterojunctions were prepared by heteroepitaxial growth of ZnSe on GaAs from the vapor phase. The electrical properties of the heterojunctions were found to be strongly dependent on the ZnSe resistivity. Heterojunctions with semi-insulating (109-1011 Ω cm) ZnSe showed symmetric current density versus voltage (J-V) characteristics and a voltage-independent capacitance. Rectification was shown by n-n heterojunctions prepared with conductive (5-25 Ω cm) ZnSe. J-V and capacitance versus voltage measurements indicated that the n-n structure behaves like a lattice-matched Schottky barrier with a barrier height of 0.7 eV. These findings were compared with recent theoretical models of the electronic structure of the ZnSe/GaAs interface.

AB - ZnSe/GaAs n-n heterojunctions were prepared by heteroepitaxial growth of ZnSe on GaAs from the vapor phase. The electrical properties of the heterojunctions were found to be strongly dependent on the ZnSe resistivity. Heterojunctions with semi-insulating (109-1011 Ω cm) ZnSe showed symmetric current density versus voltage (J-V) characteristics and a voltage-independent capacitance. Rectification was shown by n-n heterojunctions prepared with conductive (5-25 Ω cm) ZnSe. J-V and capacitance versus voltage measurements indicated that the n-n structure behaves like a lattice-matched Schottky barrier with a barrier height of 0.7 eV. These findings were compared with recent theoretical models of the electronic structure of the ZnSe/GaAs interface.

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Electrical properties of n-n ZnSe/GaAs heterojunctions

Abstract

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