Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ± 2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of O N of E F = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.
|Original language||English (US)|
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|Issue number||SUPPL. 1|
|State||Published - Dec 1 2000|
ASJC Scopus subject areas
- Materials Science(all)