Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ± 2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of O N of E F = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
StatePublished - Dec 1 2000

ASJC Scopus subject areas

  • Materials Science(all)

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