Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov; B. W. Wessels

doi:10.1557/s1092578300004427

Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ± 2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of O_N of E^F = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Original language	English (US)
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	5
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300004427
State	Published - 2000

ASJC Scopus subject areas

General Materials Science

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abstract = "Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ± 2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.",

author = "Korotkov, {R. Y.} and Wessels, {B. W.}",

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AU - Korotkov, R. Y.

AU - Wessels, B. W.

PY - 2000

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N2 - Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ± 2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

AB - Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ± 2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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ER -

Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Abstract

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