Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov; Bruce W Wessels

Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov^*, Bruce W Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of ⊖ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of O_N of E^F = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Original language	English (US)
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - Dec 1 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy",

abstract = "Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of ⊖ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.",

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year = "2000",

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T1 - Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

AU - Korotkov, R. Y.

AU - Wessels, Bruce W

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of ⊖ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

AB - Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of ⊖ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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M3 - Article

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JO - Materials Research Society Symposium - Proceedings

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Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Abstract

ASJC Scopus subject areas

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