Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of ⊖ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - Dec 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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