Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Engineering & Materials Science

• Compensation and Redress 14%
• Doping (additives) 21%
• Electric properties 60%
• Electrons 19%
• Hall effect 25%
• Hot Temperature 9%
• Ionization potential 33%
• Metallorganic vapor phase epitaxy 100%
• Oxygen 45%
• Partial pressure 22%

Chemical Compounds

• Dioxygen 27%
• Electrical Property 47%
• Electron Particle 10%
• Energy 8%
• Hall Effect 27%
• Ionization Potential 18%
• Metallorganic Chemical Vapour Deposition 91%
• Partial Pressure 18%
• Shallow Donor 31%

Physics & Astronomy

• electrical properties 41%
• electrons 8%
• energy 5%
• energy of formation 19%
• Hall effect 17%
• ionization 13%
• oxygen 34%
• partial pressure 18%
• vapor phase epitaxy 59%