Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov; B. W. Wessels

Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

R. Y. Korotkov^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of O_N of E^F = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Original language	English (US)
Pages (from-to)	W3.80.1 - W3.80.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 29 1999 → Dec 1 1999

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Cite this

@article{fe3fd750879546478816ed597793d9ea,

title = "Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy",

abstract = "Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.",

author = "Korotkov, {R. Y.} and Wessels, {B. W.}",

year = "2000",

language = "English (US)",

volume = "595",

pages = "W3.80.1 -- W3.80.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 29-11-1999 Through 01-12-1999",

}

TY - JOUR

T1 - Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

AU - Korotkov, R. Y.

AU - Wessels, B. W.

PY - 2000

Y1 - 2000

N2 - Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

AB - Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

UR - http://www.scopus.com/inward/record.url?scp=0033684411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033684411&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033684411

SN - 0272-9172

VL - 595

SP - W3.80.1 - W3.80.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 29 November 1999 through 1 December 1999

ER -

Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this