Abstract
Codoping of p-type GaN with Mg and oxygen was investigated. By codoping with oxygen the hole concentrations increased to 2 × 1018 cm-3 at 295 K, an order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ω cm upon oxygen codoping. Variable temperature Hall effect measurements indicated that the acceptor activation energy decreases from 170±5 meV in Mg-doped films to 135 ±5 meV upon oxygen doping. The higher hole concentration results in part from a decrease in the ionisation energy of the acceptor.
Original language | English (US) |
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Pages (from-to) | 222-224 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 2 |
DOIs | |
State | Published - Jan 8 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)