Electrical properties of p-type GaN:Mg codoped with oxygen

R. Y. Korotkov*, J. M. Gregie, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

Codoping of p-type GaN with Mg and oxygen was investigated. By codoping with oxygen the hole concentrations increased to 2 × 1018 cm-3 at 295 K, an order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ω cm upon oxygen codoping. Variable temperature Hall effect measurements indicated that the acceptor activation energy decreases from 170±5 meV in Mg-doped films to 135 ±5 meV upon oxygen doping. The higher hole concentration results in part from a decrease in the ionisation energy of the acceptor.

Original languageEnglish (US)
Pages (from-to)222-224
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number2
DOIs
StatePublished - Jan 8 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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