Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography

Keyphrases

• Transistor 100%
• P-type 100%
• Electrical Properties 100%
• Properties Comparison 100%
• Junction-less 100%
• Charge Transmission 100%
• Double Gate 100%
• AFM Nanolithography 100%
• Single Gate 100%
• Atomic Force Microscopy 50%
• Gate Voltage 50%
• Nanoimprint Lithography 50%
• Transfer Characteristics 50%
• Negative Gate Voltage 50%
• Etching Process 50%
• Threshold Voltage 50%
• Drain Current 50%
• Subthreshold Swing 50%
• Silicon-on-insulator Wafer 50%
• Wet Etch Process 50%
• Silicon Nanowire Transistor 50%
• Junctionless Transistor 50%
• Nanotransistor 50%
• Drain Conductance 50%
• Pinch-off Effect 50%
• Junctionless Nanowire Transistors 50%

Engineering

• Gate Voltage 100%
• Etching Process 100%
• Nanolithography 100%
• Nanowire 100%
• Simple Model 50%
• Current Drain 50%
• Silicon on Insulator 50%
• Atomic Force Microscopy 50%

Material Science

• Transistor 100%
• Nanowires 50%
• Silicon 50%
• Wet Etching 25%
• Atomic Force Microscopy 25%